A Product Line of
Diodes Incorporated
ZXMN10A09K
Typical Characteristics - continued
2000
V GS = 0V
10
1500
1000
C ISS
C OSS
f = 1MHz
8
6
4
500
C RSS
2
V DS = 50V
I D = 4.6A
0
0.1
1
10
100
0
0
5
10
15
20
25
30
V DS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
Current
Q G
regulator
12V
50k
Same as
D.U.T
V G
Q GS
Q GD
Charge
I G
V GS
D.U.T
V DS
I D
V DS
Basic gate charge waveform
Gate charge test circuit
90%
10%
V GS
R G
V GS
R D
V DS
V DD
t d(on)
t (on)
t r
t d(off)
t (on)
t r
Switching time waveforms
Switching time test circuit
ZXMN10A09K
Document Number DS32045 Rev. 7 - 2
6 of 8
www.diodes.com
January 2010
? Diodes Incorporated
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相关代理商/技术参数
ZXMN10A11G 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 100V, 2.4A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes
ZXMN10A11G 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223
ZXMN10A11G_04 制造商:ZETEX 制造商全称:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN10A11GFTA 制造商:ZETEX 制造商全称:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN10A11GFTC 制造商:ZETEX 制造商全称:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN10A11GTA 功能描述:MOSFET 100V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN10A11GTC 功能描述:MOSFET 100V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN10A11K 功能描述:MOSFET N-CHAN 100V DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件